Oxidation of Silicon, Silicon Carbide (SiC) and Silicon Nitride (Si3N4)
Abstract
Si, SiC, and Si3N4 are important materials. They are widely used for their electrical properties in the construction of semiconductor devices, and SiC and Si3N4 have important uses as hard and relatively oxidation-resistant ceramics. The carefully controlled oxidation of Si to SiO2 is used in the fabrication of semiconductors. Because of the many similarities in the oxidation chemistry of the three substances, they are treated together in this report so that useful comparisons can be made. The major questions to be addressed are: What are the oxidation reactions and what is the detailed mechanism by which they occur; How do these oxidation processes depend on: a) the form that the material takes, e.g., processing procedure, crystal structure, b) temperature, and c) oxygen pressure. Although other oxidants, e.g., H2O, either alone or in combination with O2 also oxidize these materials, this report will deal with O2 exclusively. Each of the above questions will be addressed in detail for each of the three materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 04, 1986
- Accession Number
- ADA168886
Entities
People
- K. H. Stern
Organizations
- United States Naval Research Laboratory