Preparation and Investigation of Amorphous Gallium Arsenide Films,

Abstract

A new method for the preparation of a-GaAs films -- Plasma Enhanced Chemical Transport Deposition (PECTD) is described. The experimental results indicate that a bright smooth surface, a nearly stoichiometric composition and a good reproducibility of the a-GaAs films could be obtained if proper technological conditions were selected and controlled. The growth mechanism of PECTD is also discussed. Keywords: Amorphous semiconductors; Thin films; Arsenic trichloride.

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Document Details

Document Type
Technical Report
Publication Date
Jun 11, 1986
Accession Number
ADA168907

Entities

People

  • Kunji Chen
  • Rulin Wu
  • Zoya Yang

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Chemical Reactions
  • Diffraction
  • Electron Diffraction
  • Electron Microscopes
  • Films
  • Foreign Technology
  • Frequency
  • Glow Discharges
  • Materials
  • Phase
  • Physical Properties
  • Radio Frequency
  • Spectra
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Readers

  • Canadian European Scientific Immigration and Epilepsy Clearance Studies
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene