Incremental Quench Research.
Abstract
The growth of large homogeneous (Hg,Cd)Te single crystals by the incremental quenching process/traveling heater method was investigated. The method is based on the sequential freezing of shallow melts that have large surface-to-volume ratios onto a large diameter growing ingot. The resulting polycrystalline (Hg,Dd)Te ingot has a bimodal microstructure with small grains on the outer surface and dendrides at the center of the ingot. Subsequent annealing of the ingots at a temperature below the solidus promotes grain growth on the order of 25 mm in diameter. Growth of large area crystals by the traveling heater method has been successfully demonstrated where 22- by 40-mm crystals have been grown without a seed. The crystals show very low subgrain boundary structures with dislocation densities ranging from 50,000 per sq cm to 300,000 per sq cm as measured by the etch pit method. The electrical characteristics of smaller crystals (20 mm in diameter) grown by the traveling heater method have shown purification during growth.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 30, 1986
- Accession Number
- ADA168980
Entities
People
- A. J. Syllaios
- Leonardo Colombo
Organizations
- Texas Instruments