Millimeter-Wave Heterojunction Two-Terminal Devices.

Abstract

The objective of this study is to investigate the performance of heterojunction MITATT (mixed tunnel-avalanche transit time) diodes at millimeter-wave frequencies. Along with the heterojunction MITATT diodes, GaAs double-drift IMPATT (impact ionization avalanche transit-time) diodes were also fabricated and their RF performance were evaluated. Keywords: Mixed tunnel-avalanche transit-time (MITATT); Heterojunction; Millimeter-wave frequencies; Impact ionization avalanche transit time (IMPATT); Tunnel transit time (TUNNETT).

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1986
Accession Number
ADA168985

Entities

People

  • George I. Haddad
  • J. R. East
  • M. E. Elta
  • N. S. Dogan

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Elements
  • Chemistry
  • Compound Semiconductors
  • Electron Microscopes
  • Electronics Laboratories
  • Fabrication
  • Field Effect Transistors
  • Measurement
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • P-N Junction Diodes
  • P-N Junctions
  • Power Electronics
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics

Readers

  • Semiconductor Device Technology

Technology Areas

  • 5G