An Accurate Method to Extract Specific Contact Resistivity Using Cross Bridge Kelvin Resistors,

Abstract

The cross bridge Kelvin resistor structure is used to extract true interfacial specific contact resistivity (rho sub c). Two dimensional simulations demonstrate that the sublinear behavior of the measured contact resistance versus contact area on a log-log plot is due to current crowding around the contact which results from the contact window size being smaller than the diffusion width. The effect is more pronounced for low values of rho sub c. Excellent agreement has been found between the simulations and measured data of contact resistances. An accurate value of rho sub c has been extracted for the case of PtSi to N+ polysilicon contacts. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1985
Accession Number
ADA169241

Entities

People

  • E. Crabbe
  • Krishna C. Saraswat
  • R. M. Swanson
  • S. E. Swirhun
  • W. M. Loh

Organizations

  • Stanford University

Tags

Communities of Interest

  • C4I
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Diffusion
  • Electric Power
  • Electrical Engineering
  • Electrons
  • Engineering
  • Extraction
  • Measurement
  • Resistance
  • Resistors
  • Scaling Laws
  • Simulations
  • Students
  • Two Dimensional

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology