Intrinsic siO2 Film Stress Measurements on Thermally Oxidized si.
Abstract
We have investigated the effects of varying Si oxidation conditions on intrinsic film stress for Si02 films formed on Si. This study includes stress measurements on four Si orientations: (100), (110), (111), and (311); at oxidation temperatures ranging from 700-1100 C; wet (H20) vs. dry (02) oxidations for (100) and (111) surfaces; and the effects of post-oxidation annealing on stress. We find an orientation dependence for intrinsic stress which scales in the following manner: (110) > (311) > (100) > (111); a reduction in stress for wet vs. dry studies; and an even larger reduction for post-oxidation anneals. A recently proposed step model seems to account for the differences in stress with Si orientation. A number of Si oxidation models based on intrinsic stress are compared in their ability to describe the observed behavior, and we conclude that within the Deal-Grove oxidation model, the linear rate constant is strongly influenced by stress in the initial regime while stress is also likely to be important for thicker films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 20, 1986
- Accession Number
- ADA169602
Entities
People
- E. Kobeda
- Eugene A. Irene
Organizations
- University of North Carolina at Chapel Hill