New Results on Low Temperature Thermal Oxidation of Silicon.
Abstract
The commonly accepted linear-parabolic oxidation model for the thermal oxidation of Si includes two rate processes in a steady state: reaction between Si and oxidant at the Si-Si02 interface; and transport of oxidant through the Si02 film. Based on available data, it is argued that the former process seems dominant for thin film growth in dry 02. A number of measured Si02 film and Si-Si02 interface measured properties are reported, as well as the variation of these properties with oxidation temperature and Si substrate orientation. These properties include; refractive index, density, intrinsic stress, interface fixed oxide charge and interface trapped charge. It is also observed that all of these properties display similar oxidation temperature and inert anneal behavior plus a complex orientation dependence. Through the use of a modified form for the interface reaction, a better understanding is obtained of both the origin of these measured properties, and new oxidation data taken on five Si orientations and at lower oxidation temperatures than previously reported.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 20, 1986
- Accession Number
- ADA169603
Entities
People
- Eugene A. Irene
Organizations
- University of North Carolina at Chapel Hill