2-D Simulations for Accurate Extraction of the Specific Contact Resistivity from Contact Resistance Data,

Abstract

This paper presents a unified approach for the accurate extraction of specific contact resistivity P sub c for ohmic contacts. Using 2-D simulations, which account for the current flow, or crowding around the contact window, we have analysed the resistance data obtained from the Cross Bridge Kelvin Resistor, the Contact End Resistor, and the Transmission Line Tap Resistor. For each particular structure, a universal set of curves is derived that allows accurate determination of P sub c, given the geometry of the structure. The values obtained for P sub c are independent of the test structure type, its geometry and the contact area. The data suggests that in the past researchers have overestimated P sub c and that contact resistance will not limit device performance even with submicron design rules. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1985
Accession Number
ADA169634

Entities

People

  • Krishna C. Saraswat
  • R. M. Swanson
  • S. E. Swirhun
  • T. A. Schreyer
  • W. M. Loh

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Accuracy
  • Current Density
  • Diffusion
  • Electric Power
  • Equations
  • Experimental Data
  • Extraction
  • Geometry
  • Helmholtz Equations
  • Integrated Systems
  • Leading Edges
  • Metal-Semiconductor Junctions
  • Resistance
  • Resistors
  • Scaling Laws
  • Simulations
  • Two Dimensional

Readers

  • Computational Modeling and Simulation
  • Electrical Engineering
  • Semiconductor Device Technology