Low Temperature Silicon Oxidation Studies.

Abstract

Several models have been proposed to explain the role of stress on low temperature silicon oxidation kinetics but the lack of experimental data has precluded an analysis of these models. The results of experimental studies independently measuring the reaction kinetics and intrinsic stress as a function of orientation and oxidation temperature are presented. The proposed stress models are evaluated in terms of these results. It is concluded that the existing models do not explain all aspects of the data.

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Document Details

Document Type
Technical Report
Publication Date
Jun 20, 1986
Accession Number
ADA169699

Entities

People

  • E. A. Lewis
  • E. Kobeda
  • Eugene A. Irene

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Kinetics
  • Chemistry
  • Equations
  • Films
  • Heat Of Activation
  • Kinetics
  • Low Temperature
  • Materials
  • Materials Science
  • Measurement
  • Military Research
  • Optical Materials
  • Oxidation
  • Oxides
  • Security
  • Silicon Dioxide
  • Surface Properties

Readers

  • Materials Science and Engineering.
  • Powder metallurgy of Titanium alloys.
  • Systems Analysis and Design