Novel Si-Based Materials and Device Structures by Molecular Beam Epitaxy.

Abstract

The final report describes the technical tasks and accomplishments during the contractual period from April 25, 1983 to April 24, 1986. Research findings in four scientific areas, (a) MBE growth, (b) heterojunction properties, (c) superlattice and quantum well structural devices, and Si on insulator by MBE are summarized. Details of these results are referred to the journal publications attached. In addition to scientific publications, the results of this research also help industrial development of commercial molecular beam epitaxy systems in U.S.

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Document Details

Document Type
Technical Report
Publication Date
Jun 15, 1986
Accession Number
ADA170061

Entities

People

  • Kang L. Wang

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Electronics Laboratories
  • Epitaxial Growth
  • Heterojunctions
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Power Electronics
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Quantum Computing