Large Signal Modeling and Analysis of the GaAs MESFET.

Abstract

The purpose of this work is to develop a large signal lumped circuit model of the GaAs MESFET to aid in the designs of microwave MESFET circuits. The circuit elements of this model are obtained either directly or indirectly from the DC and RF measurements of the device to be modeled. To analyze this circuit model, a nonlinear circuit simulation computer program is written. This routine is base on a hybrid time-frequency domain iterative algorithm called 'multiple reflection technique'. To improve the speed of analysis, an accelerate convergence scheme is incorporated into the multiple reflection technique for the first time to analyze three terminal device. The validity of the analysis algorithm is first checked by comparing the simulation results of a MESFET with published data. The large signal model developed is then confirmed by comparing the simulation results of a MESFET modeled in this work to the experimental results. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 09, 1986
Accession Number
ADA170304

Entities

People

  • Tatsuo Itoh
  • Vincent D. Hwang

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Algorithms
  • Amplifiers
  • Charge Carriers
  • Circuit Analysis
  • Computer Programs
  • Computers
  • Differential Equations
  • Equations
  • Equivalent Circuits
  • Field Effect Transistors
  • Frequency
  • Frequency Domain
  • Measurement
  • Microwaves
  • Nonlinear Differential Equations
  • Semiconductors
  • Simulations

Fields of Study

  • Engineering

Readers

  • Adaptive Control and Estimation with Uncertainty in Dynamic Systems.
  • Integrated Circuit Design and Technology.
  • Theoretical Analysis.