Picosecond Optoelectronic Diagnostics of Field Effect Transistors,

Abstract

The frequency-dependent scattering parameters of an unpackaged GaAs field effect transistor have been measured using picosecond optoelectronic diagnostic techniques. The large bandwidth available and simple de-embedding procedures make these techniques very promising for characterization of devices operating in the millimeter-wave region. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 15, 1986
Accession Number
ADA170503

Entities

People

  • Donald E. Cooper
  • Steven C. Moss

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bandwidth
  • Chemical Kinetics
  • Chemistry
  • Detectors
  • Electronics
  • Field Effect Transistors
  • Frequency
  • Lasers
  • Materials
  • Materials Science
  • Millimeter Waves
  • Physics Laboratories
  • Radiation
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Microwave Engineering.

Technology Areas

  • 5G
  • Microelectronics