Picosecond Optoelectronic Measurement of the High Frequency Scattering Parameters of a GaAs FET (Field Effect Transistor).

Abstract

In this report, we present picosecond optoelectronic measurements of the pulse response of an unpackaged GaAs field effect transistor (FET). The data are transformed to the frequency domain to extract scattering parameters with >60 GHz bandwidth. Because of the large bandwidth available and simple de-embedding procedures, this is a very promising technique for characterization of devices operating in the millimeter-wave region.

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Document Details

Document Type
Technical Report
Publication Date
Jun 15, 1986
Accession Number
ADA170618

Entities

People

  • Donald E. Cooper
  • Steven C. Moss

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Space

DTIC Thesaurus Topics

  • Bandwidth
  • Data Analysis
  • Dye Lasers
  • Embedding
  • Field Effect Transistors
  • Frequency
  • Frequency Domain
  • Laser Pulses
  • Lasers
  • Liquid Dye Lasers
  • Millimeter Waves
  • Optoelectronic Devices
  • Physics Laboratories
  • Pulse Generators
  • Scattering
  • Test Fixtures
  • Transmission Lines

Fields of Study

  • Materials science
  • Physics

Readers

  • Approximation Theory.
  • Integrated Circuit Design and Technology.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • 5G
  • Microelectronics