Quantum 1/f Noise in Submicron Devices and Quartz Resonators.
Abstract
The work performed under this grant has allowed for the first time a unitified description of 1/f noise in the mobility, the surface and bulk recombination speed, the injection, emission, trapping and tunneling processes in submicron devices and quartz resonators and surface accoustic wave devices. All noise sources mentioned above have been expressed in terms of a fundamental formula which in essence equates the spectral density of fractional cross section fluctuations (e.g. scattering cross sections which determine the frequency of collisions, the relaxation time and the mobility) with the quadratic carrier velocity change in units of the speed of light, for the process considered, multiplied by the fine structure constant 1/137. The applications to various submicron devices such as HEMT, HJT, n(+)p diodes, photodetectors have given a good fit to experimental data without free parameters.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 07, 1985
- Accession Number
- ADA170739
Entities
People
- Peter H. Handel