Investigation of a New Concept in Semiconductor Microwave Oscillators.

Abstract

The goal of this research is to fabricate and characterize a new type of semiconductor device known as a contiguous-domain transferred oscillator. This device differs from existing semiconductor oscillators in several fundamental ways, and should be capable of direct electronic tuning in the range from a few gigahertz to a few hundred gigahertz. During the first year of this project, test chips were designed, masks were made, and a processing schedule was worked out. Three aspects of the processing required special attention: implant activation, resistive gate formation, and silicon nitride deposition. Uncapped flash annealing was used for implant activation, and satisfactory results were achieved.

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Document Details

Document Type
Technical Report
Publication Date
May 20, 1986
Accession Number
ADA170772

Entities

People

  • James A. Cooper Jr.

Organizations

  • Purdue University

Tags

DTIC Thesaurus Topics

  • Annealing
  • Ceramic Materials
  • Electrical Engineering
  • Electrical Properties
  • Electrons
  • Engineering
  • Fabrication
  • Films
  • Flow Rate
  • Frequency
  • Ion Implantation
  • Materials
  • Metal Films
  • Oscillators
  • Semiconductor Devices
  • Semiconductors
  • Students

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics