The Design of Modulation Doped Heterostructures,

Abstract

This memo presents a set of design rules for the thickness and doping levels of the various layers of a modulation doped heterojunction. It is shown how to optimise the heterostructure so that there is no parasitic parallel conduction and for the maximum low temperature mobility. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1986
Accession Number
ADA170956

Entities

People

  • D A Anderson
  • I. W. Archibald
  • M. J. Kane
  • P. R. Tapster

Organizations

  • Royal Signals and Radar Establishment

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Acoustic Propagation
  • Bulk Semiconductors
  • Electrical Properties
  • Electron Density
  • Electron Gas
  • Electron Mobility
  • Electrons
  • Equations
  • Fermi Levels
  • Free Electrons
  • Heterojunctions
  • Low Temperature
  • Materials
  • Scattering
  • Semiconductors
  • Two Dimensional
  • Voltage

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design