High Efficiency Multiple Bandgap Solar Cell Research.
Abstract
The development of GaAsP/GaP devices was made for stacking on silicon bottom cells to achieve high conversion efficiencies. The estimated efficiency of the completed devices was 21% AMO under concentrated light. A four terminal sack was incorporated to allow voltage matching wiring schemes to account for differing degradation of the individual devices in the space environment. Device optimization was defined for a bandgap difference of 0.6 to 0.8 eV, with projected efficiencies of 27% for GaAsP/GaP stacked onto GaAsSb or GaInAs, and GaAs on Ge or GaSb.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1986
- Accession Number
- ADA170965
Entities
People
- J. A. Cape
- L. D. Partain
- L. M. Fraas
- P. S. Mcleod