Stress in a Bonded Wafer.
Abstract
Stresses in a flat wafer, bonded on both sides to rods of another material and subjected to axial forces perpendicular to the bonded surfaces, are treated both experimentally and theoretically. A two dimensional model analysis of the axial meridian plane of the wafer shows the build-up of stresses in the corners where the bonded surfaces meet the free surface between the rods. A three dimensional model analysis of the wafer shows a similar build-up of stresses in the corners. The principal point of these analyses is that the stress build-up drops off to a uniform stress field within two wafer thicknesses from the free surface. A theoretical analysis obtains the uniform stress field that acts on the wafer beyond two thicknesses of the free surface. This theoretical solution is shown to also given the stresses due to uniform changes in temperature of the wafer and the rods, where the wafer material and the rod material have different coefficients of thermal expansion.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 23, 1986
- Accession Number
- ADA171056
Entities
People
- Vincent J. Parks
Organizations
- United States Naval Research Laboratory