Rugged, Thin GaAs Solar Cell Development. Phase I.

Abstract

This report describes the Phase I efforts in developing high efficiency gallium arsenide (GaAs) on germanium (Ge) solar cells, for enhanced survivability and ruggedness over conventional devices. The GaAs/Ge cells will be optimized in Phase II (for high power to weight ratios) and extensively tested in Phase III.

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Document Details

Document Type
Technical Report
Publication Date
Jun 16, 1986
Accession Number
ADA171188

Entities

People

  • Kou-i Chang
  • Peter A. Iles
  • Y. C. Yeh

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Antireflection Coatings
  • Availability
  • Cell Structure
  • Coatings
  • Current Density
  • Energy
  • Gallium
  • Gallium Arsenides
  • Materials
  • Security
  • Short Circuits
  • Single Crystals
  • Solar Cells
  • Specifications
  • Standards

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Unmanned Aerial System (UAS) Autonomous Capabilities and Mission Reconnaissance.

Technology Areas

  • Microelectronics