Fundamental Aspects of Heterojunction Bipolar Transistor Technology.

Abstract

Fundamental aspects of heterojunction bipolar transistor (HBT) technology were investigated, including Be diffusion in MBE growth, the effects of epitaxial structure variations on HBT technology, effects of selected device processing methods on HBT performance,and modelling of HBT devices and ring oscillators. A summary of major results in each of these areas is given, and publications resulting from this contract are listed. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1986
Accession Number
ADA171225

Entities

People

  • D. L. Miller
  • P.M. Asbeck

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Beryllium
  • Bipolar Junction Transistors
  • Capacitance
  • Classification
  • Contracts
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Implantation
  • Ion Implantation
  • Mass Spectrometry
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Transistors

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.