Optical Emission Properties of Metal/III-V Semiconductor Interface States,

Abstract

We report the first study of optical emission properties associated with formation of metal/III-V semiconductor interface states. Cathodoluminescence spectroscopy reveals discrete levels distributed over a wide energy range and localized at the microscopic interface. Our results demonstrate the influence of the metal, the semiconductor and its surface morphology on the energy distributions. Evolution of spectral features with interface formation, particularly above monolayer metal coverage, is correlated with Fermi level movements and Schottky barrier heights. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 25, 1986
Accession Number
ADA171533

Entities

People

  • L. J. Brillson
  • M. L. Slade
  • R. E. Viturro

Organizations

  • Xerox

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abstracts
  • Band Gaps
  • Classification
  • Contractors
  • Contracts
  • Department Of Defense
  • Electronics
  • Electrons
  • Emission
  • Emission Spectra
  • Energy Bands
  • Fermi Levels
  • Luminescence
  • Military Research
  • Semiconductors
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene