Strength and Structure of Ga1-xInx as Alloys

Abstract

The strengthening effect of GaAs by indium additions is under examination. Solid solution strengthening by InAs4 solute units has been predicted and is studied via mechanical measurements complemented by electron microscopy. In this second quarterly report, hardness measurements for three Ga1-xInxAs compositions from R. T. to 900 C are complete and the second stage of the experimental work, compression testing, as a function of temperature and strain rate, is underway.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1986
Accession Number
ADA171897

Entities

People

  • John P. Hirth
  • Katherine Faber

Organizations

  • Ohio State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Classification
  • Contracts
  • Crystal Growth
  • Electron Microscopes
  • Electron Microscopy
  • Electrons
  • High Temperature
  • Low Temperature
  • Materials
  • Materials Science
  • Melting Point
  • Microscopy
  • Shear Stresses
  • Solid Solutions
  • Strain Rate
  • Thermal Stresses
  • Yield Strength

Fields of Study

  • Materials science

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Powder metallurgy of Titanium alloys.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics