Strength and Structure of Gal-xInxAs Alloys

Abstract

Substantial solid solution strengthening of GaAs by In acting as InAs4 units has recently been predicted. This strengthening could account for the reduction of dislocation density in GaAs single crystals grown from the melt. Our objective is to investigate the mechanism by which strengthening is produced by In additions to GaAs. In the first stages of this study, experimental measurements of hardness as a function of temperature and In content are reported.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1986
Accession Number
ADA172042

Entities

People

  • John P. Hirth
  • Katherine Faber

Organizations

  • Ohio State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Chemistry
  • Coatings
  • Compound Semiconductors
  • Contracts
  • Encapsulation
  • Experimental Data
  • Hardness
  • Heat Capacity
  • High Temperature
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Protective Coatings
  • Scientific Research
  • Semiconductors
  • Solid Solutions

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Powder metallurgy of Titanium alloys.
  • Semiconductor Device Technology