Single Crystal Films of Semiconductors on Amorphous Substrates Via a Low Temperature Graphoepitaxy,

Abstract

The objective of this program is to carry out basic research in order to acquire fundamental understanding which will permit the development of a general, low temperature process for obtaining oriented, defect free single crystal semiconductor films on amorphous substrates.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1986
Accession Number
ADA172057

Entities

People

  • Harry I. Smith

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Air Force
  • Boundaries
  • Classification
  • Crystals
  • Grain Boundaries
  • Grain Growth
  • Grain Size
  • Ion Bombardment
  • Low Temperature
  • Materials
  • Materials Science
  • Orientation (Direction)
  • Semiconductors
  • Single Crystals
  • Thickness
  • Thin Films
  • Zone Melting

Readers

  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene