Semiconductor Engineering for High-Speed Devices

Abstract

Our aim in this period has been to devise a simple, physically intuitive model to study the quantitative trends of hot-electron behavior in semiconductor alloys. This is being done to offer preliminary guidance to experimental programs, and to serve as a simple limit to check the more elaborate calculations still to come. Even our simple model is based on fairly complete alloy band structures, and therefore constitutes an advance over previously published results.

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Document Details

Document Type
Technical Report
Publication Date
Dec 15, 1985
Accession Number
ADA172194

Entities

People

  • A. B. Chen
  • A. Sher
  • Siddhartha Krishnamurthy

Organizations

  • SRI International

Tags

Communities of Interest

  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Brillouin Zones
  • Bulk Semiconductors
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Current Density
  • Demography
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Mobility
  • Semiconductor Devices
  • Semiconductors
  • Steady State
  • Stratified Fluids

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics