Microwave Acoustics Device Study.

Abstract

This final report summarizes the results of a single one year study of the device physics aspects of the thin film bulk acoustic wave resonator. The study involved high Q trapped energy resonators, zinc diffusions in GaAs as a precursor to temperature coefficient studies, and refinements to the two dimensional numerical analysis modeling of microwave acoustic boundary value problems by the finite difference method. Keywords: Microwave acoustics, Thin film resonators, Bulk acoustic waves, Diffusion of Zn, and GaAs.

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Document Details

Document Type
Technical Report
Publication Date
Jul 22, 1986
Accession Number
ADA172713

Entities

People

  • K. M. Lakin

Organizations

  • Iowa State University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Acoustic Properties
  • Acoustic Waves
  • Acoustics
  • Coefficients
  • Computer Programs
  • Difference Equations
  • Field Effect Transistors
  • Films
  • Materials
  • Numerical Analysis
  • Resonant Frequency
  • Resonators
  • Semiconductors
  • Thin Films
  • Two Dimensional
  • Voltage
  • Waves

Readers

  • Acoustical Oceanography.
  • Microwave Engineering.
  • Thin Film Deposition Science.