Semiconductor Heterostructures and New Forms of Devices

Abstract

The ultimate limitations of electronic transport in semiconductor heterostructure layers and superlattices are investigated. The potential of these layers for novel semiconductor device applications is assessed.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1986
Accession Number
ADA172731

Entities

People

  • K. Hess

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Charge Carriers
  • Chemical Vapor Deposition
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Electron Mobility
  • Electronics Laboratories
  • Energy Bands
  • Energy Levels
  • Exclusion Principle
  • Fermi Levels
  • High Electron Mobility Transistors
  • Monte Carlo Method
  • Semiconductor Devices
  • Semiconductors
  • Three Dimensional
  • Two Dimensional

Fields of Study

  • Materials science

Technology Areas

  • Microelectronics