Apparatus for Analysis of Epitaxial Crystal Growth.
Abstract
In this grant funds were requested and received for the purchase of an epitaxial growth and analysis apparatus to investigate the chemistry, photochemistry, and kinetics of growth of semiconductor thin films by metalorganic chemical vapor deposition (MOCVD). The apparatus consists of an epitaxial growth chamber compatible with the inclusion of in situ diagnostic techniques, an excimer dye laser system for use in laser induced fluorescence (LIF) studies of gaseous speices, and a mass spectrometer for in situ analysis of gaseous constituents of MOCVD growth environment. These items were to be incorporated into a system for the investigation of the growth kinetics of MOCVD.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 08, 1986
- Accession Number
- ADA172890
Entities
People
- Paul Daniel Dapkus
Organizations
- University of Southern California