Transport in Submicron MOSFETS.

Abstract

Research on this contract gradually shifted from the treatment of transport in the inversion channel of a silicon MOSFET to the general treatment of heterointerfaces and superlattices, as well as the use of the transport perpendicular to the interface to study the properties of the materials themselves. New understanding of the limitation of optical measurements of inter-band transitions in quantum wells in determining the band offsets were obtained.

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Document Details

Document Type
Technical Report
Publication Date
Sep 15, 1986
Accession Number
ADA173156

Entities

People

  • David K. Ferry

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Charge Carriers
  • Chemistry
  • Compound Semiconductors
  • Computational Science
  • Differential Equations
  • Energy Bands
  • Heterojunctions
  • Magnetic Fields
  • Materials
  • Modules (Electronics)
  • Power Electronics
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Spin-Orbit Interaction

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Theoretical Analysis.

Technology Areas

  • Quantum Computing