Amphoteric Impurities in Gallium Arsenide.

Abstract

Low temperature photoluminescence spectroscopy has been applied to the study of high purity GaAs grown by liquid phase epitaxial, hydride vapor phase epitaxial, metalorganic chemical vapor deposition and molecular beam epitaxial growth techniques. This analytical technique has been used in combination with the analysis of variable temperature Hall effect data to quantitatively analyze the acceptor species present in high purity epitaxial GaAs. The incorporation of the amphoteric column IV elements has been studied for different growth conditions in each of the epitaxial growth techniques.

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Document Details

Document Type
Technical Report
Publication Date
Jul 14, 1986
Accession Number
ADA173160

Entities

People

  • Gregory E. Stillman

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Elements
  • Engineering
  • Epitaxial Growth
  • Gallium Arsenides
  • Hall Effect
  • Illinois
  • Low Temperature
  • Materials
  • Molecular Beams
  • Semiconductors
  • Spectroscopy
  • United States
  • Vapor Deposition
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene