Strength and Structure of GA(1-x)IN(x) as Alloys
Abstract
The strengthening effect of gallium arsenide by indium additions is under examination. Interpretation of high temperature hardness results of In- free and In-containing GaAs suggests that the intermediate temperature hardening of these orders of magnitude during growth. The third quarterly report describes the most recent mechanical tests in this study to better understand the solid- solution strengthening in these systems. In the previous report, hardness measurements on undoped and In-doped GaAs wafers were reported. Conversion of these data to critical resolved shear stress values show that the values are in the same range as those experienced by the crystal during growth. The strengthening at higher temperatures with In addition is consistent with solution hardening being responsibile for dislocation density reduction in In- doped GaAs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 15, 1986
- Accession Number
- ADA173254
Entities
People
- John P. Hirth
- Katherine Faber
Organizations
- Ohio State University