Prompt Charge Collection in Gallium Arsenide Diodes Struck by Energetic Heavy Ions.
Abstract
Charge collection was measured as a function of reverse bias voltage on GaAs Schottky barrier diodes bombarded with heavy, energetic ions. Ion species included in the study were copper (57 MeV), chlorine (62 MeV), oxygen (18 MeV), and, to establish a baseline for comparisons, 241 Am decay alpha particles (5.4 MeV). Measurements of the drift component of collected charge are compared to funeling predictions based on the Hu and McLean Oldham models. Results show that significant funneling occurs in these gallium arsenide diodes, in reasonable agreement with predictions for the lighter ions, but to a lesser extent than predicted by both models for the heavier ions. Comparing these results with data on silicon diodes published in the literature shows that gallium arsenide is less responsive to heavy ion strikes than silicon. This enhances the value of the gallium arsenide technology for systems required to operate in environments containing high energy heavy ions, such as cosmic rays in the exoatmosphere. Keywords: Single event upset; gallium arsenide; funnel effect; plasma screening.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1986
- Accession Number
- ADA173515
Entities
People
- Gregory K. Ovrebo
- Joe Schifano
- Raine M. Gilbert
Organizations
- Harry Diamond Laboratories