Micro-Reactions on Metal Contacts on Various Types of GaAs Surfaces.

Abstract

Results towards an optimization of the GaAs device technology for stable metal contracts are reported. The etch-dependent structure of a surface microroughness has been evaluated by a replica TEM technique. Apart from A1, results are presented for TiPtAu interdiffusion for various types of initial GaAs surface conditions due to the technology applied. At 250 C, Ti seems to be exchanged with Ga and becomes a donor under simultaneous current and temperature stressing. The etchant NH4OH : H2O2 : H2O (ratio 2 : 1 : 300) has been established as possibly one of the best candidates for stable electrodes.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1986
Accession Number
ADA173522

Entities

People

  • B. R. Sethi
  • H. L. Hartnagel
  • J. Wuerfl
  • K.-h. Kretschmer

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Reactions
  • Chemical Synthesis
  • Chemistry
  • Compound Semiconductors
  • Electronics Industry
  • Field Effect Transistors
  • Kinetic Energy
  • Measurement
  • Metal-Semiconductor Junctions
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Spectra
  • Surface Chemistry
  • Surface Properties
  • Surface Roughness

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.