Proceedings of the Chinese Conference on Integrated Optics (3rd) Held at Shanghai, China on October 15-20, 1985.
Abstract
Partial contents: 1) The Crossing Channel Electrooptical Modulator and Its Comparison with Other Modulators; 2) Integrated Optoelectronic Devices for Integrated Circuits and Communications; 3) Research Advanced in Lightwave Communication Systems; 4) PTAC system without the Reset In Fiber Acoustic Sensor; Low Loss LPE AlGaAS Waveguide and Monolithic Integrated AlGaAS/GaAS Optical Devices: ABSTRACT: The fabrication, processing and performance of integrated optical circuits utilizing A1GaAs and GaAs epitaxial layers grown by liquid phase epitaxy (LPE) on a GaAs substrate is described. Wet chemical etching is used to define the circuit structure. Large area (6cm), uniform and low loss (1cm-1) optical A1GaAs/GaAs waveguides (at a wavelength 0.85um) have been achieved, and their applications are discussed. Electron microprobe X-ray analysis and low temperature photoluminescence are shown to be a convenient and sensitive means of measuring epitaxial layer uniformity and quality; these data are correlated with waveguide loss measurements. Article Texts are in English or Chinese.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 15, 1985
- Accession Number
- ADA173530
Entities
Organizations
- University of California, Santa Barbara