Characteristics of Pt Thin Films on TiO2(110).

Abstract

Thin films of Pt on oxidized and reduced forms of TiO2 have been studied under UHV conditions, XPS and depth profile data support migration ofa reduced Ti oxide to the Pt surface (encapsulation) when a reduced sample is annealed above 400 C. On the fully oxidized sample, annealing caused islanding of the Pt layer but no encapsulation. XPS characterization of the encapsulating species indicates that Ti is present primarily as Ti(2+). Keywords: Titanium dioxide; Platinum; X ray photoelectron spectroscopy, Ultrahigh vacuum.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1986
Accession Number
ADA173540

Entities

People

  • D. N. Belton
  • J. Michael White
  • Y.-m. Sun

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemistry
  • Crystals
  • Encapsulation
  • Films
  • Grain Boundaries
  • Ionization
  • Metals
  • Military Research
  • Oxides
  • Physical Chemistry
  • Physics
  • Single Crystals
  • Spectra
  • Thin Films
  • Three Dimensional
  • Universities
  • X Rays

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene