Characteristics of Pt Thin Films on TiO2(110).
Abstract
Thin films of Pt on oxidized and reduced forms of TiO2 have been studied under UHV conditions, XPS and depth profile data support migration ofa reduced Ti oxide to the Pt surface (encapsulation) when a reduced sample is annealed above 400 C. On the fully oxidized sample, annealing caused islanding of the Pt layer but no encapsulation. XPS characterization of the encapsulating species indicates that Ti is present primarily as Ti(2+). Keywords: Titanium dioxide; Platinum; X ray photoelectron spectroscopy, Ultrahigh vacuum.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1986
- Accession Number
- ADA173540
Entities
People
- D. N. Belton
- J. Michael White
- Y.-m. Sun
Organizations
- University of Texas at Austin