Investigation of Device and Electronic Interactions Associated with GaAs Device Processing.
Abstract
Investigation is made of defect and electronic interactions in Gallium Arsenide along three lines especially important for device processing: (a) origin and control of native midgap levels; (b) feasibility for achieving vanadium-doped semi-insulating GaAs; and (c) origin and control of dislocations. Employing DTLS measurements of p-type bulk GaAs crystals grown under different arsenic pressure, we have identified a dominant hole trap which exhibits two charge states at 0.54 eV and 0.77 eV above the valence band. These levels are most likely due to the single and double donor levels of the arsenic antisite As sub Ga defect. The same samples are currently analyzed by photoluminescence in order to correlate dep level luminescence spectra with transient capacitance spectra. Our study of vanadium doped GaAs has led to identification of the vanadium acceptor state V2+ (3D3) at 0.15 eV below the conduction band. No midgap levels other than El2 could be detected, showing that vanadium plays no direct role in the compensation process, in SI GaAs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 15, 1985
- Accession Number
- ADA173577
Entities
People
- Harry C. Gatos
- Jacek Lagowski
Organizations
- Massachusetts Institute of Technology