Focused Ion Beam Fabrication of Graded Channel FET's (Field Effect Transistors) in GaAs and Si.

Abstract

The main goals of this research program are to use the focused ion beam system for fabricating field effect transistors in GaAs and Si with graded doping profiles, and to model the behavior of these novel device structures. The devices are fabricated by conventional processing steps except that the channel doping is performed with the focused ion beam. This permits the channel doping to be varied as a function of distance along the surface from source to drain. To achieve this goal, sophisticated performance is required from the focused ion beam system: the deflection has to be calibrated; alignment marks have to be located; rotation of the sample has to be corrected for; and a desired doping profile has to be implanted. The fabricated device must be tested, and models of the behavior developed.

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Document Details

Document Type
Technical Report
Publication Date
Oct 27, 1986
Accession Number
ADA173782

Entities

People

  • John Melngailis

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Classification
  • Computer Simulations
  • Contracts
  • Deflection
  • Electronics
  • Electronics Laboratories
  • Fabrication
  • Field Effect Transistors
  • Ion Beams
  • Ions
  • Management Personnel
  • Massachusetts
  • Program Management
  • Rotation
  • Security
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Optical Physics and Photonics.