Distribution Analysis of Major and Trace Elements Through Semiconductor Layers of Changing Matrix Using SIMS.

Abstract

Secondary ion mass spectrometry(SIMS) is often used to monitor elemental distributions in solids and at solid interfaces. The current status of quantitative SIMS analysis in layered multimatrix samples is presented. The basics of SIMS quantification and theories describing matrix effects will be reviewed, matrix effect calibration and depth profile corrections for A1xGa1-x As multilayers will be examined, a method of extending these calibrations to the remaining IIIA-VA semiconductors will be presented, and future trends in matrix effect calibration and depth profile correction will be discussed.

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Document Details

Document Type
Technical Report
Publication Date
Aug 15, 1986
Accession Number
ADA173814

Entities

People

  • Alan A. Galuska
  • G. H. Morrison

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Kinetics
  • Chemical Reactions
  • Chemistry
  • Compound Semiconductors
  • Ionization
  • Mass Spectrometry
  • Materials
  • Materials Science
  • Measurement
  • Physics Laboratories
  • Security
  • Semiconductor Devices
  • Semiconductors
  • Space Systems
  • Spectrometry
  • Spectroscopy
  • Sputtering

Readers

  • Computational Modeling and Simulation
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics