Electronic Structure of Interface States of MOS and SOS Device Materials.
Abstract
The use of ion implantation in silicon device fabrication is known to give rise to defects both in the silicon and oxide. Some of these defects may be capable of withstanding even high temperature (1000C) anneals. Renewed interest in ion implantation in Si/SiO2 device structures in recent years has led to the use of a variety of experimental techniques to investigate the nature of damage produced by implantation of ions in the energy and dose ranges of technological interest. Since such defects may be paramagnetic, EPR has proved to be a very useful technique for studying radiation damage on an atomic scale. Ion irradiation of amorphous SiO2 produces two predominant paramagnetic centres, one associated with an oxygen vacancy (E '1) and the other with a non-bridging oxygen atom (oxygen hole centre). There is a marked difference between the EPR spectra of these centres. The E'1 centre is characterised by an almost axial g-tensor which in thermal oxides gives rise to a glassy lineshape with apparent g-value of 2.0005 and linewidth of approx. 2G (at X-band). The ESR signal saturates at low levels of microwave power. The OHC also exhibits a glass lineshape but the spread of g-values is much larger giving rise to a very extended spectrum.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 23, 1986
- Accession Number
- ADA173905
Entities
People
- B. Henderson
Organizations
- University of Strathclyde