Low-Electronegativity Overlayers and Enhanced Semiconductor Oxidation: Sm on Si(111) and GaAs(110) Surfaces.

Abstract

Thin mixed valence overlayers (<1 monolayer) of Sm deposited on Si or GaAs cleavage surfaces prior to oxygen exposure give rise to oxidation promotion effects of unprecedented magnitude. In contrast with this, purely divalent Sm overlayers (thickness <1 monolayer) exhibit negligible oxidation promotion activity. We examine the role of metal electronegativity and metal-semiconductor interface morphology in determining the specific catalytic activity of the overlayer.

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Document Details

Document Type
Technical Report
Publication Date
Apr 15, 1986
Accession Number
ADA174109

Entities

People

  • A. Franciosi
  • A. Raisanen
  • A. Wall
  • P. Philip
  • Shi Chang

Organizations

  • University of Minnesota

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Catalysts
  • Chemical Engineering
  • Chemisorption
  • Electronics
  • Elements
  • Energy Bands
  • Materials
  • Materials Science
  • Monomolecular Films
  • Radiation
  • Residuals
  • Semiconductors
  • Spectra
  • Synchrotron Radiation
  • Universities
  • Valence
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene