Small Structures and Superlattices for Future High-Speed Devices
Abstract
Novel microstructures for high speed and high density electronics are studied with simulations on five new three terminal devices fabricated one of these new device structures and have measured the DC current voltage characteristics. The desired three terminal device behavior has been observed at 300K and 77K. Completed the installation of a picosecond pulser and in the process of obtaining some of the first measurements of the response time of tunneling devices. A capability to simulate the process of making high speed measurements with microstrip lines is developed. This simulation capability will be essential in interpreting the results of the high speed measurements. The development of a small Si MBE growth chamber is completed and silicide-silicon structures are being grown in this system. Installing a unique MBE facility that will include provision for growing group IV semiconductors and silicides, III-V semiconductors. analyzing structures, using Auger and ESCA. and a metallization chamber that includes not only the provision for evaporating metals but can be used as an intro-chamber for a more extensive processing facility. This facility is unique in the world but is serving as a prototype for systems planned by other groups. Some basic studies of the properties of GaAs-GaA1As interfaces that are basic to their use in novel device structures have been carried out.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1986
- Accession Number
- ADA174155
Entities
People
- T. C. Mcgill
Organizations
- California Institute of Technology