Electronic Promoters and Semiconductor Oxidation: Alkali Metals on Si(111) Surfaces.

Abstract

The effect of thin (1-2 monolayers) overlayers of the low-electronegativity metals Cs and Na on the oxidation of Si(111) cleavage surfaces is examined. Synchrotron radiation photoemission studies of oxygen chemisoption as a function of overlayer thickness and oxygen exposure indicate large oxidation promotion effects and the formation of Si-oxidation states dominate. Comparison with promotion effects induced by transition metals and noble metals overlayers forces a re-evaluation of the microscopic mechanisms proposed to explain overlayer-induced oxidation promotion.

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Document Details

Document Type
Technical Report
Publication Date
Apr 25, 1986
Accession Number
ADA174228

Entities

People

  • A. Franciosi
  • A. Raisanen
  • A. Wall
  • P. Philip
  • Shi Chang

Organizations

  • University of Minnesota

Tags

DTIC Thesaurus Topics

  • Adsorption
  • Alkali Metals
  • Chemical Engineering
  • Chemisorption
  • Electronics
  • Energy Bands
  • Engineering
  • Losses
  • Materials Science
  • Minnesota
  • Radiation
  • Semiconductors
  • Synchrotron Radiation
  • Thickness
  • Valence Bands
  • Wisconsin
  • Work Functions

Fields of Study

  • Physics

Readers

  • Military Leadership and Professional Education.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene