The Effect of Surface Orientation on Silicon Oxidation Kinetics.

Abstract

It is well established that the rate of thermal oxidation of silicon depends on the surface orientation, but a comprehensive model for the role of the surface orientation in the kinetic mechanism is lacking. The results of several experiments designed to develop a better understanding of which surface properties are most important in establishing the oxidation rate are reported. The results indicate that the Si surface atom density is important in the initial stages of oxidation and a revised explanation for the crossover effect is proposed.

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Document Details

Document Type
Technical Report
Publication Date
Nov 13, 1986
Accession Number
ADA174462

Entities

People

  • E. A. Lewis
  • Eugene A. Irene

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Chemical Kinetics
  • Chemical Reactions
  • Chemistry
  • Data Sets
  • Diffusion
  • Diffusivity
  • Equations
  • Films
  • High Pressure
  • Kinetics
  • Measurement
  • Military Research
  • North Carolina
  • Oxidation
  • Partial Pressure
  • Surface Properties
  • Two Dimensional

Readers

  • Theoretical Analysis.
  • Thin Film Deposition Science.