Application of the ALE and MBE Methods to the Growth of Layered Hg sub x Cd sub 1-x Te Films.

Abstract

We have studied the applicability of the Atomic Layer Epitaxy (ALE) and Molecular Beam Epitaxy (MBE) to growth of Hg(x)Cd(1-x)Te thin-films throughout the composition range 0 < or = x < or = 0.8. The objective of our work has been ato study alternatives to the conventional MBE growth of HgCdTe. We have applied ALE as one possibility and an ionized Hg technique as another.

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Document Details

Document Type
Technical Report
Publication Date
Sep 26, 1986
Accession Number
ADA174473

Entities

People

  • Markus Pessa

Organizations

  • Tampere University of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Crystal Structure
  • Crystallography
  • Crystals
  • Detection
  • Energy Bands
  • Epitaxial Growth
  • Heat Energy
  • Mass Spectrometry
  • Phase Diagrams
  • Semiconductors
  • Solid State Physics
  • Thermodynamics
  • Transitions

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.