Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic.

Abstract

Graded regions of n-(Ga,In)As and p-Ga(As,Sb) were incorporated side-by-side as emitter and base contacts respectively, into an npn (Al,Ga)As/GaAs heterostructure bipolar transistor (HBT). The process involved two separate MBE growths, leading to base contact regions that were self-aligned to the emitter mesas. The devices could be easily probed with pressure contacts even prior to any metallization, and excellent characteristics were obtained after final metallization.

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Document Details

Document Type
Technical Report
Publication Date
Oct 30, 1986
Accession Number
ADA174580

Entities

People

  • Herbert Kroemer
  • M. A. Rao
  • Stephen I. Long

Organizations

  • University of California, Santa Barbara

Tags

DTIC Thesaurus Topics

  • Air Force
  • Auger Electron Spectroscopy
  • Bipolar Junction Transistors
  • California
  • Chemical Vapor Deposition
  • Computers
  • Energy Bands
  • Engineering
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Materials
  • Metal-Semiconductor Junctions
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Semiconductors
  • Transistors
  • Universities

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology