Design and Fabrication of Submicron Magnetic Bubble Device Technology.

Abstract

Work was carried out on high density (16 to 64 Mbit/sq cm) magnetic bubble device technology. Highlights of the research include the successful fabrication of silicon MOSFETS on bubble garnet substrates and the development of ion implanted bubble devices utilizing 0.5um bubbles in garnets with isotropic magnetostriction. In addition, studies of the effects of ion implantation on garnet lead to improved fabrication techniques for the 0.5um devices. Chips utilizing 1um bubbles were demonstrated to have about 9% bias field margins at 50 0e drive, and a numerical model was developed to model current accessed ion implanted devices. Keywords Include: Bubble Memory, Ion Implantation, Garnet, Silicon-on-Insulator, and Silicon-on-Garnet.

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Document Details

Document Type
Technical Report
Publication Date
Oct 31, 1986
Accession Number
ADA174621

Entities

People

  • C. L. Bauer
  • D. W. Greve
  • M. Alex
  • M. H. Kryder
  • R. O. Campbell

Organizations

  • Carnegie Mellon University

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Bubble Memories
  • Computer Programs
  • Computers
  • Crystal Structure
  • Crystals
  • Current Density
  • Failure Mode And Effect Analysis
  • Liquid Phase Epitaxy
  • Magnetic Fields
  • Magnetic Materials
  • Magnetic Properties
  • Materials Processing
  • Materials Science
  • Measurement
  • Memory Devices
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Underwater engineering and Marine Technology.

Technology Areas

  • Microelectronics