Analytical Investigations of Bulk Wave Resonators in the Piezoelectric Thin Film on Gallium-Arsenide Configuration.
Abstract
The results of earlier calculations of the quality factor of the piezoelectric thin film on semiconductor composite resonator due to radiation into the semiconductor wafer for the strip case both when trapping is and is not present are briefly discussed. Experimental verification of the results is noted. It is also noted that the direct calculation procedure is extremely cumbersome to use, but that it is required to check the accuracy of a perturbation procedure which is much easier to use. The perturbation procedure for the calculation of the quality factor of the composite resonator due to radiation into the semiconductor wafer is discussed and it is noted that the perturbation procedure enables calcualtions for the case of rectangular electrodes and diaphrams to be performed. It is further noted that for the strip case the calculations of the quality factor using the perturbation procedure are in good agreement with the results obtained from the earlier more cumbersome direct procedure. Keywords include: Piezoelectricity; Elasticity; Resonators; Bulk Waves; Thin Films; Semiconductor Wafers; Composite Resonators; Energy Trapping; Radiation; Quality Factor; Plate Vibrations.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1986
- Accession Number
- ADA174715
Entities
People
- Harry F. Tiersten
Organizations
- Rensselaer Polytechnic Institute