Applications of Focused Ion Beams in Microelectronics,
Abstract
We present the conclusions of the RSRE programme on the application of focused ion beams in microelectronics and review the literature published in this field. We discuss the design and performance of focused beam implanters and the viability of their application to semiconductor device fabrication. Applications in the areas of lithography, direct implantation and micromachining are discussed in detail. Comparisons are made between the use of focused ion beams and existing techniques for these fabrication processes with a strong emphasis placed on the relative throughputs. We present results on a novel spot size measurement technique and the effect of beam heating on resist. We also present the results of studies into implantation passivation of resist to oxygen plasma attack as basis for a dry development lithography scheme. A novel lithography system employing flood electron exposure from a photocathode which is patterned by a focused ion beam which can also be used to repair mask defects. (Great Britain)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1986
- Accession Number
- ADA174864
Entities
People
- C. Broughton
- M. I. Beale
- V. G. Deshmukh
Organizations
- Royal Signals and Radar Establishment