Study of Infrared Nonlinear Processes in Semiconductors.
Abstract
The primary aim of the program is to discover materials and/or structures with large, fast nonlinear optic susceptibilities. Such elements are required in optical signal processing systems, and for protection of imaging devices. The program is mainly experimental, with supporting theoretical work. Tests of nonlinear crystals also provide important information concerning carrier kinetics in semiconductors, through the difference frequency variation of X(3). In the past year, we have used this technique to determine carrier relaxation times, in the picosecond range, in n-Si :P and HgTe. Where appropriate, we investigate the device implications of optical-semiconductor interactions. Our studies of free carrier, spin-induced Faraday rotation, were motivated by the possibility of using this effect in tunable IR filters and CO2 laser isolators.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1986
- Accession Number
- ADA174921
Entities
People
- P. A. Wolff
- S. Y. Yuen
Organizations
- Massachusetts Institute of Technology