Plasma Deposition of Silicon Carbide Thin Films.

Abstract

In the plasma studies area, the model for carbon deposition from methane plasmas was extended to include homogeneous chemical kinetics of both neutral and ionized species, and it was tested with extensive plasma characterization experiments varying plasma excitation and flow parameters. In addition, experiments were completed on methane-hydrogen plasmas, and will be compared to the model. Thermal desorption and dissociation kinetic studies of propylene on silicon surfaces has produced several significant results. It was found that surface reactivity could be controlled by creating damage sites via ion bombardment or by capping such sites with atomic hydrogen. In addition, the adsorption of propane and methane were studied at 120K and compared to the double-bonded propylene using kinetic uptake experiments and Auger surface studies. It was found that no sticking is obtained for hydrocarbon molecules that do not have C=C double bonds. This program has produced several journal articles as well as numerous invited and contributed conference talks and papers. Four preprints are attached which describe the main accomplishments of this program during this reporting period.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 30, 1986
Accession Number
ADA174970

Entities

People

  • John Yates
  • L. E. Kline
  • Michael J. Bozack
  • W. D. Partlow
  • W. J. Choyke

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Body Weight
  • Chemical Kinetics
  • Chemical Reaction Properties
  • Chemical Reactions
  • Chemical Synthesis
  • Chemistry
  • Dissociation
  • Electrons
  • Mass Spectroscopy
  • Materials
  • Measurement
  • Semiconductors
  • Silicon Carbide
  • Spectra
  • Spectroscopy
  • Surface Chemistry
  • Surface Reactions

Readers

  • Organic Chemistry
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.